221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com sensitron semiconductor technical data data sheet 1063, rev. b hermetic power mosfet n-channel features: 100 volt, 0.035 ohm, 55a mosfet electrically isolated, hermetically sealed electrically equivalent to om55n10sa maximum ratings all ratings are at t a = 25 c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - 20 volts continuous drain current ? v gs =10v, t c = 25 c v gs =10v, t c = 100 c i d - - 55 33 amps pulsed drain current - @ t c = 25 c i dm - - 180 amps operating and storage temperature t op /t stg -55 - +150 c termal resistance junction to case r q jc - - 0.43 c/w total device dissipation @ t c = 25 c p d - - 290 watts electrical characteristics characteristic symbol min. typ. max. units drain to source breakdown voltage v gs = 0v, i d = 250 m a bv dss 100 - - volts drain to source on state resistance v gs = 10v, i d = 30 adc t c = 100 c r ds(on) - - 0.035 0.07 w gate threshold voltage v ds = v gs , i d = 250 m a v gs( th ) 2.0 - 4.0 volts forward transconductance v ds > i d (on) , i d = 30 adc g fs 25 - - s(1/ w ) zero gate voltage drain current v ds = max. rating, v gs = 0v v ds = max. rating x 0.8 v gs = 0v, t j = 125 c i dss - - 250 1000 m a gate to source leakage forward v gs = -20v gate to source leakage reverse v gs = 20v i gss - - -100 100 na total gate charge v gs = 10v, v ds = max. rating x 0.8, i d = 30a q g - 120 - nc off voltage rise time v dd = 80v, fall time i d = 30a, crossover time r g = 50 w , v gs = 10v t r ( voff ) t f t cross - 200 210 410 - nsec diode forward voltage t j = 25 c, i sd = 55a, v gs = 0v t j = 125 c v sd - - 1.5 volts diode reverse recovery time t j = 25 c, reverse recovery charge i s = 55a, dis/ dt = -100a/ m sec v r = 80 v t rr q rr - 180 1.8 - nsec m c input capacitance v gs = 0 v, output capacitance v ds = 25 v, reverse transfer capacitance f = 1.0mhz c iss c oss c rss - 4000 1100 250 - pf ? package limited: i d = 25a @ 25 c - pulse test: pulse width 300 m s. duty cycle 1.5% SHD225512
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron.com e-mail address - sales@sensitron.com sensitron data sheet 1063 revision b mechanical dimensions: in inches / mm device type pin-1 pin-2 pin-3 n-channel mosfet to-254 package drain source gate scematic symbol SHD225512 1 2 3 .260 .249 (6.60 6.32) .050 .040 (1.27 1.02) .150(3.81) bsc .545 .535 (13.84 13.58) .545 .535 (13.84 13.60) .800 .790 (20.32 20.07) .685 .665 (17.40 16.89) 1.235 1.195 (31.37 30.35) .045 .035 (1.14 0.89) 3 places .150(3.81) bsc 2 places .149 .139 (3.78 3.53) dia. to-254 g s d n-channel
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.
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